Power MISFETs on InP.

Abstract

Mesa expitaxial and planar implanted InP power MISFET's have been fabricated. At 9.7 GHz CW mesa devices demonstrated 4.5W output with 4 dB gain at 46 percent power-added efficiency with a power density of 4.5W/mm, over three times the highest value ever reported for GaAs FET's. Power output is stable with 2 percent over 167h continuous operation. Planar implanted devices exhibited 3.5W output with 5.4 dB gain, 40 percent power-added efficiency and 3.5W/mm power density at 9.7 GHz. Keywords: Semiconductor technology, Electrooptics electronics.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1988
Accession Number
ADA195242

Entities

People

  • L. J. Messick

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Charge Carriers
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Dielectrics
  • Fabrication
  • Field Effect Transistors
  • Germanium Compounds
  • Mass Spectrometry
  • Materials
  • Materials Processing
  • Materials Science
  • Optoelectronic Devices
  • Semiconductor Devices
  • Semiconductors
  • Spectrometry
  • Spectroscopy

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics