III-V Heterojunction Structures and High Speed Devices

Abstract

A systematic investigation of the InyGa1-yAs/Al0.15Ga0.85 As pseudomorphic MODFET has revealed an optimum InAs mole fraction of 0.15 < or = y < or = 0.20. Meanwhile, continuing studies of the InGaAs/GaAs strained layer MQW by optical transmission and photoreflectance have displayed sharp spectral features, revealing the excellent optical quality of the samples. With good agreement between the measured spectra and our band structure model, an increased understanding of the InGa/GaAs MQW structures into p-i-n optical modulators, large 27% changes in transmission have been reported. Operating this MQW electroabsorption optical modulator as a Self-Electrooptic Effect Device, we have reported the first demonstration of this device in the InGaAs material system.

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Document Details

Document Type
Technical Report
Publication Date
Mar 08, 1988
Accession Number
ADA195464

Entities

People

  • Hadis Morkoç

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Band Structures
  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Jet Propulsion
  • Optics
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology