Beam Assisted Fabrication of III-V/Si Monolithic Devices.
Abstract
This research project is to explore two new methods for deposition of III-V semiconducting films on Si substrates. Using gas-source molecular beam epitaxy (MBE) and photo-beam and electron-beam assisted metal-organic chemical vapor deposition (MOCVD), GaAs and other III-V films with abrupt heterojunctions are being formed epitaxially on Si, and by means of optical and electrical Characterization the suitability of the resulting III-V/Si structures are being examined for use monolithic devices. A well-confined hydrogen plasma of disk shape is employed both as a vacuum ultraviolet (VUV) lamp operating primarily at 121.5 nm and as a source of atomic hydrogen radicals. Both VUV photons and atomic hydrogen act to dissociate feedstock gases used in low-temperature (< 400 C) metalorganic chemical vapor deposition (MOCVD). Thin films have been deposited both with the confined hydrogen plasma and with an excimer laser operating at 193 nm in order to compare the two methods. Preliminary chemical and electrical properties of the films deposited via the two methods indicate the superiority of the atomic hydrogen assisted MOCVD technique.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1988
- Accession Number
- ADA195479
Entities
People
- Gary Y. Robinson
Organizations
- Colorado State University