Physics and Technology for the In-Situ Investigation of Properties of Materials
Abstract
The progress report is broken up into four sections, the first detailing the apparatus constructed, the second, results on CoSi2, and third, very recent results on free standing Aluminium films and wires. In addition, results on Arsenic doped Silicon are proceeding and are described briefly. Samples can be inserted into our Oxford 200 top loading dilution refrigerator cryostat which has been modified to include a 7T magnet mounted on the mixing chamber. We also have a small independently operated solenoid which is used to ramp the magnetic field slowly, and to provide a zero field environment, by nulling out trapped fields in the main solenoid. This apparatus allows us to carry out transport measurements down below 20 mK (5 mK in zero field), provided that the sample holders are properly heat sunk. We have carried out measurements on several samples of Cobalt Silicate (CoSi2). The first was on a 170 Angstrom thick layer where we observed that the material had a resistance ration of approximately 5.5, with a superconducting transition at approximately 1K (mid point 0.75K), (see figure 1a), and a critical field of approximately 100 G. In this sample, we have observed a shallow minimum in resistance at 4.5 K (figure 1b) with a log T low temperature resistance in the normal state.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 12, 1988
- Accession Number
- ADA195498
Entities
People
- J. M. Parpia
- R. C. Richardson
Organizations
- Cornell Laboratory of Atomic and Solid State Physics