Low Temperature Pulsed Plasma Deposition. Part 1. A New Technique for Thin Film Deposition with Complete Gas Dissociation.
Abstract
Conventional continuous plasma processes, for both deposition and etching, have three limitations. Theses limitations are: 1) incomplete gas dissociation, 2) gas depletion effects, and 3) substrate heating, either by the plasma itself or as a requirement of good film quality during deposition. However, all three of these disadvantages can be overcome in a novel process, where high power Radiofrequency energy is pulsed. In this paper the pulsed plasma process and equipment is described in detail, and applications of its unique capabilities are discussed. Keywords: Pulsed plasma; This film deposition; Complete gas dissociation. (jhd)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 12, 1988
- Accession Number
- ADA195523
Entities
People
- G. A. Scarsbrook
- I. P. Llewellyn
- R. A. Heinecke
- S. M. Ojha