Metal Contacts on Semiconductors.
Abstract
An investigation into the factors influencing the electrical properties of GaAs Schottky contacts has been started. Initially it was attempted to make electrically ideal contacts to chemically etched GaAs surfaces by evaporating Au overlayers at room temperature. Although it is possible to occasionally make good diodes in this fashion it is not possible to make contacts consistently with near ideal characteristics (n is usually approx. 1.5). However, the best contact made in this way did have an ideality factor of n = 1.02 and a barrier height of theta BIV = 0.88 eV. Gallium arsenides. (mjm)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1985
- Accession Number
- ADA195674
Entities
People
- R. H. Williams
Organizations
- Cardiff University