Metal Contacts on Semiconductors.
Abstract
After some preliminary measurements of the transport properties of GaAs Schottky diodes, fabricated on air-cleaved and chemically etched surfaces, it became obvious that the basic assumptions underlying the 'standard' methods for analysing I-V and C-V curves required some detailed re-examination. Measurements of the Schottky barrier height using the conventional I-V and C-V techniques, (theta SB)IV and (theta SB)CV respectively, often give different results. It has been found that if the I-V curves are analysed using models that are based upon thermionic emission over the barrier alone and ignore the effect of the parallel conduction path through localised states in the depletion region then the Schottky barrier height is overestimated. By correctly taking into account the effects of recombination and trapping of majority carriers at localised states that have energies within the band gap of the semiconductor a more accurate value for theta SB is obtained. Gallium arsenides. (mjm)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1985
- Accession Number
- ADA195675
Entities
People
- R. H. Williams
Organizations
- Cardiff University