Metal Contacts on Semiconductors.
Abstract
A detailed study has bee made of the methods that are used to estimate the magnitude of the Schottky barrier height at metal semiconductor interfaces. The results of this study have clearly demonstrated that the conventional procedures for extracting the barrier height from a measurement of a diodes I-V characteristics often provide an underestimate. Therefore a new method has been developed for analysing the I-V characteristics. The method correctly takes into account the effects of the recombination generation current, the voltage dependence of the barrier height and the effect of a large series resistance. The barrier height is obtained using a graphical method which utilizes both the forward and reverse biased characteristics. (MJM)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1986
- Accession Number
- ADA195676
Entities
People
- R. H. Williams
Organizations
- Cardiff University