Metal Contacts on Semiconductors.
Abstract
Substantial progress has been made on the programme during the past few months. We have studied the microscopic interactions for several selected metals with both clean and oxidized surfaces of GaAs and InP, and in a series of parallel studies we have established Schottky barrier heights by transport techniques. Data for metals on GaAs will be published shortly. Broadly speaking the data is in agreement with those published by others for metals on cleaved (110) GaAs surfaces but with important differences. One such is the case of manganese. This element strongly interacts with the clean GaAs surface and yields reproducible and well behaved Schottky barriers. Gallium arsenides, Indium phosphides. (mjm)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1986
- Accession Number
- ADA195677
Entities
People
- R. H. Williams
Organizations
- Cardiff University