Metal Contacts on Semiconductors.
Abstract
Experiments involving metal contacts on a number of semiconductors have continued during the last six months. Microscopic interactions of a range of metals with clean and oxidized indium phosphide surfaces have been investigated by soft X-ray photoemission and a substantial effort has been directed towards the interpretation of the obtained. We have concentrated, in particular, on the transition metals chromium, manganese and vanadium, and also on the alkali metal Na. The transition metals are all highly reactive with clean InP, and give a range of Schottky barriers between ohmic and 0.4 eV. We have also investigated Schottky barriers for thick films of these metals deposited on clean cleaved (110) InP surfaces, by I-V and C-V techniques. Indium phosphides. (mjm)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1987
- Accession Number
- ADA195678
Entities
People
- R. H. Williams
Organizations
- Cardiff University