Metal Contacts on Semiconductors.

Abstract

The experiments on metal-semiconductor interfaces have been extended in the last six months using a range of techniques including Raman spectroscopy, photoemission spectroscopy, and transport measurements. The results obtained give complementary information and improve the understanding of Schottky barrier formation. The deposition of Sb on clean cleaved InP (110) surfaces has been investigated most intensively. This Sb/InP exhibits highly unusual properties amongst metal-semiconductor interfaces. Indium phosphides, Antimony. (mjm)

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1987
Accession Number
ADA195679

Entities

People

  • R. H. Williams

Organizations

  • Cardiff University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Kinetics
  • Electric Fields
  • Electromagnetic Scattering
  • Energy Bands
  • Heat Of Activation
  • Low Temperature
  • Monomolecular Films
  • Phase Transformations
  • Raman Scattering
  • Raman Spectroscopy
  • Semiconductors
  • Soft X Rays
  • Spectra
  • Spectroscopy
  • Synchrotron Radiation
  • X Rays

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene