Metal Contacts on Semiconductors.

Abstract

Since the last report a number of experiments have been carried out on metal-semiconductor interfaces and semiconductor heterostructures. The range of experimental techniques applied included low energy electron diffraction (LEED), X-ray photoemission spectroscopy (XPS), Raman scattering, and transport measurement, i.e. current-voltage (I-V) and capacitance-voltage (C-V) measurements. The system investigated most thoroughly within this project is Sb on InP(110). As mentioned in an earlier report this Sb/InP interface exhibits properties which makes it an ideal system to study the formation of Schottky barriers and also test the different theoretical models for this formation. The Raman and transport measurements were performed on both Sb/n-InP and Sb/p-InP. This work has been accepted for publication and preprints are included. Indium phosphides, Antimony. (MJM)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1988
Accession Number
ADA195680

Entities

People

  • R. H. Williams

Organizations

  • Cardiff University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Diffraction
  • Electric Fields
  • Electron Diffraction
  • Electrons
  • Emission
  • Energy Bands
  • Heterojunctions
  • Measurement
  • Raman Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene