Joint Services Electronics Program.
Abstract
As part of a project to construct, model and compare very high performances Si and GaAs devices, deep-submicron Si MOSFETs have been investigated. Using a novel optical lithography process, these extremely high-gain MOSFETs with varying oxide thicknesses and channel lengths have been fabricated. Figure 1 shows a Scanning Electron Microscope(SEM)picture of a transistor cross-section with an effective channel length 0.2 micron, an oxide thickness of 86 A, and junction depth of 0.2 micron. Devices with effective channel lengths as small as 0.15 micron and oxide thickness as thin as 36 A have been successfully fabricated and operated. (rh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 29, 1988
- Accession Number
- ADA195731
Entities
People
- W. G. Oldham
Organizations
- University of California, Berkeley