Simulation of the Response of a Gallium Arsenide JFET to Single Particle Radiation in Two and Three Dimensions.
Abstract
The response of a GaAs JFET to single particle radiation is simulated in two and three dimensions through numerical solution of the drift and diffusion, and Poisson's equations. Scaling of the particle track density is introduced in the two-dimensional simulation. The two- and three-dimensional results are compared. Qualitative agreement between the three-dimensional simulation are observed, but quantitative differences in current pulses and charge collected at the devices contacts are present. In an effort to aid in the design and fabrication of devices more resistant to single event upsets and to gain understanding of the internal dynamics of devices struck by single radiation particles, device researchers have turned to numerical simulation. Early studies of such phenomena involved two-dimensional simulations of the response of two-terminal N+P diode structures to single particle radiation. These studies gave light to a result coined the field-funneling effect. Keywords: Junction field effect transistors; Heterojunctions; Gallium arsenides. (jhd)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1987
- Accession Number
- ADA195777
Entities
People
- B. J. Morrison
- H. L. Grubin
- J. P. Kerskovsky