Growth of GaAs Crystals by the Heat Exchanger Method (HEM) for Microwave Device Applications
Abstract
Large GaAs crystals with uniform properties and low defect density are required for microwave devices. The variable quality of the available GaAs, wafer-to-wafer, intra-wafer, boule-to-boule, and intra-boule is unsatisfactory for high yield device processing. It has been shown that undoped (100) semi- insulating GaAs crystals can be grown using the Heat Exchanger Method (HEMTM) with remarkably uniform electronic properties. It has also been demonstrated that undoped dislocation free GaAs crystals can be grown by HEM. The present effort was to understand the cause of lineage and twinning observed in the structure of 3-inch-diameter GaAs boules. Gallium Arsenides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1988
- Accession Number
- ADA196028
Entities
People
- Chandra P. Khattak
- Frederick Schmid