Microcircuit Trace Cutting with Focused Ion Beams
Abstract
When a failed microelectronic device is examined in a scanning electron microscope (SEM), several possible failure sites are often visible, but positive identification of the primary failure site based on micrographs alone is difficult. Several other SEM imaging modes--e.g. electron beam induced current (EBIC) and voltage contrast imaging--have been shown to be very helpful in identifying failure sites or clarifying failure mechanisms. These methods involve collecting current or supplying voltage signals through external leads to the failed device. However, application of these techniques is precluded if shorting of device elements (traces) has occurred as a result of catastrophic failure. Failure analysis is facilitated if trace metallizations can be cut selectively to isolate the electrically shorted portions of the device. This report describes the disadvantages of current trace cutting techniques and introduces a new method without these disadvantages - focused ion beam cutting.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 20, 1988
- Accession Number
- ADA196030
Entities
People
- G. W. Stupian
- M. S. Leung
Organizations
- The Aerospace Corporation