Development of Heterojunction Power MISFETs (Metal-Insulator- Semiconductor Field-Effect Transistor)

Abstract

The objective of this program is to develop the material, device designs, and circuit technologies for heterojunction power MISFETs capable of high-efficiency power operation at 60 and 94 GHz. The use of a wide bandgap, undoped AlGaAs layer as the gate insulator is expected to provide higher gate- drain breakdown voltage and higher output that are possible with conventional MISFETs. The charge transport layer is an undoped layer that has good transport properties. Device performance is further improved by the charge accumulation at the quantum well. The developed devices should be suitable for monolithic integration into fully dense phased arrays. This first year has been dedicated to optimizing the MISFET device structure. The following have been achieved during the first 12-month period: Optimized the quantum well MISFET layer structure using the numerical computer model, Developed the device processes, now nearly complete, Optimized pseudomorphic material growth conditions, Demonstrated MISFET operation at 60 GHz, and Performed S-parameter measurements up to V-band.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1988
Accession Number
ADA196152

Entities

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Contracts
  • Dielectrics
  • Electron Density
  • Electrons
  • Field Effect Transistors
  • Frequency
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Millimeter Waves
  • Phased Arrays
  • Semiconductors
  • Transport Properties
  • Transport Protocols
  • V Band

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing