Ion Kinetics in Silane Plasmas

Abstract

The kinetics of ion formation by electron impact and subsequent reaction in silaneinoble-gas mixtures have been examined using pulsed ion cyclotron resonance (ICR) mass spectrometry with the objective of discerning the role played by ions in plasma reactors which deposit amorphous silicon films. Cross-sections for ionization of the noble-gases and silane as well as dissociative attachment of electrons to silane are presented.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1988
Accession Number
ADA196202

Entities

People

  • Peter D. Haaland

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Chemical Reaction Properties
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Computational Science
  • Dissociation
  • Electron Density
  • First Principles Calculations
  • Ionization
  • Kinetic Energy
  • Mass Spectrometry
  • Measurement
  • Pressure Measurement
  • Quantum Mechanics
  • Quantum Properties
  • Spectroscopy

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics