Study of Infrared Nonlinear Processes in Semiconductors

Abstract

This program includes: 1.) Demonstration that phase transitions and electrical instabilities enhance optical nonlinearities in semiconductors. 2.) Discovery of exceedingly large third order optical nonlinearities CUBED CHI . 0. 001 ESU with picosecond response time in zero gap materials (HgTe, HgCdTe, HgMnTe). 3.) First observation of impurity-induced optical nonlinearity in semiconductors. 4.) Prediction and observation of negative absolute carrier mobilities in quantum wells.

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Document Details

Document Type
Technical Report
Publication Date
May 18, 1988
Accession Number
ADA196452

Entities

People

  • Peter A. Wolff

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Band Gaps
  • Classification
  • Electrical Engineering
  • Electro-Optics
  • Electron Holes
  • Energy Bands
  • Equations
  • Fermi Levels
  • Materials
  • Optical Switching
  • Optics
  • Quantum Wells
  • Security
  • Semiconductors
  • Students
  • Wave Mixing

Readers

  • Analytical Mechanics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing