Trace Element Characterization in III-V Compounds Sputter by Sputter Initiated Resonance Ionization Spectroscopy
Abstract
The VLSI and VHSIC development programs of the Air Force require characterization of III-V compounds with an interference free, highly sensitive element analysis technique having good lateral depth resolution. Sputter Initiated Resonance Ionization Spectroscopy (SIRIS), an ultrasensitive analytical technique being developed commercially by Atom Sciences, has been demonstrated to have good sensitivity and to be interference free in silicon. Detection limits of 2 ppb (1 x 10 to the 14th/cc) have been shown for gallium in bulk silicon. Prior to the work reported here, lateral and depth resolution of the SIRIS apparatus was not adequate for the present and future needs of the semiconductor industry. Lateral resolutions of 100 to 5 microns are now necessary, and resolutions into the submicron range will be required in the future. In the project reported here, the SIRIS instrument was modified to include a microbeam ion gun system, and the new instrument was demonstrated to have a lateral resolution less than 100 microns with a detection limit in the few ppb range. An ion beam of about 5 microns diameter was demonstrated with a predicted detection limit of 0.1-1 ppm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1988
- Accession Number
- ADA196659
Entities
People
- James E. Parks