Point Defects in Semiconductors: Microscopic Identification, Metastable Properties, Defect Migration, and Diffusion

Abstract

Fundamental progress is made in the identification of point defect complexes in semiconductors (particularly EL2 and ELO in GaAs), the elucidation of the mechanisms by which they migrate (particularly re vacancy nearest neighbor hopping in compound semiconductors and recombination enhanced migration of vacancies in Si), and the development of an efficient means to simulate their detailed, and very complicated, diffusion and inter-reaction on a microcomputer using an innovative (and evidently unique) Monte Carlo method. Some effort has also recently gone into the elucidation of the temperature dependence of band off sets at heterojunctions, particularly GaAs-AlAs and HgTe-CdTe. Keywords: Cadmium telluride; Mercury telluride; Gallium arsenide; Aluminum arsenide.

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Document Details

Document Type
Technical Report
Publication Date
Apr 22, 1988
Accession Number
ADA196670

Entities

People

  • James A. Van Vechten
  • John F. Wager

Organizations

  • Oregon State University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Compound Semiconductors
  • Computer Simulations
  • Computers
  • Diffusion
  • Electron Irradiation
  • Elements
  • Enthalpy
  • High Temperature
  • Low Temperature
  • Migration
  • Monte Carlo Method
  • Point Defects
  • Semiconductors
  • Simulations
  • Universities

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics