Synthesis and Properties of CdTe Films

Abstract

This program of research was established to develop CdTe epitaxial films and quantum well structures by molecular beam epitaxy (MBE) and to study their physical properties. During 1983-1985, CdTe films were successfully deposited on various substrates including sapphire, silicon, and gallium arsenide. The films were judged to be of high quality on the basis of photoluminescence and x ray diffraction rocking curve studies. Using the photoassisted MBE technique to prepare n-type CdTe and CdMnTe layers led to the fabrication of field effect transistors based on these materials. The present program has impacted profoundly on the development of the II-VI semiconductors studied and has contributed significantly to a strong resurgence of interest in these materials. The work impacts on the areas of optoelectronics, magnetooptics, integrated optics and infrared detector technology. Keywords: Infrared materials, Cadmium tellurides, Quantum well structures, Epitaxial growth. (MJM).

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Document Details

Document Type
Technical Report
Publication Date
Jun 20, 1988
Accession Number
ADA197041

Entities

People

  • J. F. Schetzina

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Electrical Properties
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunctions
  • Materials
  • Military Research
  • Molecular Beam Epitaxy
  • Optical Properties
  • Optics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing