Joint Services Electronics Program

Abstract

Several milestones have been reached in GaAs research. The first active GaAs device, a 1 micrometers channel width MESFET, has been made at Columbia. This device is a basic building block in the GaAs CCD program. GaAs surface studies have also born fruit. UV light has been found to oxidize rapidly the surface of GaAs in an UHV environment containing traces of water vapor and O2. The mechanism appears to be related to the generation of hot photocarriers. Keywords: Gallium arsenide devices, Ultraviolet radiation, Photocarriers, Diode lasers, Molecule dynamics, Atom dynamics, Polyatomic bath modes, Energy transfer, Liquid surfaces.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1988
Accession Number
ADA197140

Entities

People

  • George W. Flynn
  • Richard M. Osgood, Jr.

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Classification
  • Dynamics
  • Electronics
  • Electronics Laboratories
  • Energy Transfer
  • Laser Diodes
  • Laser Science
  • Laser Spectroscopy
  • Lasers
  • Measurement
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Wave Mixing

Readers

  • Environmental Engineering
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy
  • Microelectronics