Infrared All-Optical Image Processing in Semiconductors Using the Nonlinear Index Due to Dynamic State-Filling

Abstract

This project included basic studies of infrared nonlinear optical response and optical switching in semiconductor materials. Investigations ranged from the mid-infrared (InAs) through the 1.06 micron region (InP/based quaternaries) to the near-IR (GaAs/GaAlAs Multiple Quantum Wells). Mechanisms of dynamic state filling were explored; the stdy was extended to exciton resonance nonlinearities and finally the concept of enhanced carrier transport nonlinearities was introduced. This new non-local nonlinearity is due to the motion of optically induced charges within semiconductor depletion regions causing space change fields which decrease built-in fields. The optically induced change in internal fields causes nonlinear transmission due to electro- absorption, electro-refraction, and the quantum confined Stark effect. The result was the experimental demonstration of larger nonlinearities than have ever been previously measured, with a change of refractive index of 0.01 at an intensity level of 700 microwatts/sq cm.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1988
Accession Number
ADA197205

Entities

People

  • Elsa Garmire

Organizations

  • University of Southern California

Tags

DTIC Thesaurus Topics

  • Absorption
  • Chemical Vapor Deposition
  • Classification
  • Electric Fields
  • Heterojunctions
  • Image Processing
  • Information Processing
  • Materials
  • Optical Materials
  • Optical Phenomena
  • Optical Properties
  • Optics
  • Optoelectronic Devices
  • Quantum Wells
  • Refraction
  • Refractive Index
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Space