Research on Mercury Cadmium Telluride

Abstract

This report summarizes work done during the third year of a program entitled, Research on Mercury Cadmium Telluride. CdTe studies were extended to the DLTS of both n- and p- material. The wide gap materials effort was expanded with the growth of Zinc Selenides, which is lattice matched to Galium Arsenides. Significant (100-200 times) improvement in the photoluminescence of GaAs was demonstrated by the use of a pseudomorphic ZnSe layer. The new reactor is fully operational, and is capable of growing HgCdTe with a Cd composition control of + or - 0.002 across a 1 cm x 1 cm slice. In addition, significant improvement in MCT quality was obtained by the use of CdTeSe substrates. Work with CdTeZn substrates was also carried out during this year. Epitaxial growth.

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Document Details

Document Type
Technical Report
Publication Date
Jun 21, 1988
Accession Number
ADA197238

Entities

People

  • S. K. Ghandhi

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electron Mobility
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Heat Energy
  • Heat Treatment
  • Magnetic Fields
  • Measurement
  • Military Research
  • Optoelectronic Devices
  • Semiconductors
  • Systems Engineering

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.