Studies of Ultrathin Polymer Films for Lithographic Applications
Abstract
The advantages of minimizing polymer resist thickness to the macromolecular dimensions are manifold. In optical lithography, ultrathin resists can improve exposure and focus latitude and alleviate the problem of absorption in conventional resists for deep ultraviolet (UV) exposure. In electron beam lithography it is desirable to reduce the resist thickness to minimize forward electron scattering in the resist, and to allow penetration when using the scanning tunneling microscope (STM) as a very low voltage exposure source. Moreover, we can better understand many phenomena such as the nature of the pinholes and etching resistance, which are still puzzles for the thicker films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 1988
- Accession Number
- ADA197297
Entities
People
- C. C. Fu
- C. W. Frank
- Roger Fabian W. Pease
- S. W. Kuan
Organizations
- Stanford University