Ultrathin Polymer Films for Microlithography
Abstract
Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 1988
- Accession Number
- ADA197298
Entities
People
- C. C. Fu
- C. W. Frank
- D. R. Alee
- P. Maccagno
- S. W. Kuan
Organizations
- Stanford University