Nuclear Reactions in GaAs and Si and Their Role in the Single Event Upset Problem
Abstract
Experiments were carried out to measure charge collection resulting from exposure of Rockwell Fat-FET test structures to alphas, heavy ions and protons. The alpha and heavy ion data were used to determine the dimensions of the sensitive volume following techniques outlined in Appendix A. Charge collection measurements in Si PIN photodiodes were carried out. This represents the first test of the ability of the CUPID codes to handle partially depleted n-p junctions. Measurements were made with two devices. The UV-100 PIN photodiode from EG+G had a sensitive volume which was only partially depleted even at high voltages, the YAG 444 is fully depleted over its thickness (400 um) when fully biased but the depletion width is substantially reduced for low biases. Gallium arsenides, Silicon.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1988
- Accession Number
- ADA197343
Entities
People
- Peter J. Mcnulty
Organizations
- Clarkson University