X-Ray Photoelectron Spectroscopy Study of Si-C Film Growth by Chemical Vapor Deposition of Ethylene on Si(100)
Abstract
The growth of a thin film of silicon carbide grown by chemical vapor deposition (CVD) of ethylene on Si(100) at 970 K was studied by X-Ray Photoelectron Spectroscopy (XPS). The growth of the film was observed through the behavior of the Si(2p) and C(1s) core levels and their plasmon losses. A 1. 2eV (towards higher binding energy) shift is observed for the Si(p) binding energy between silicon in Si(100) and silicon in SiC. The plasmon loss energies measured as a function of film thickness below the C(1s) emission indicate that the C/Si ratio of the Si-C thickness below the C(1s) emission indicate that the C/Si ratio of the Si-C film throughout the CVD process is fairly constant. (jes)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 18, 1988
- Accession Number
- ADA197437
Entities
People
- J. T. Yates Jr.
- Michael J. Bozack
- P. A. Taylor
- Wolfgang J. Wolfgang J. Choyke
Organizations
- University of Pittsburgh