Epitaxial 3-5 Semiconductors for Integrated Electro-Optics
Abstract
Research has been conducted on the synthesis and evaluation of new organometallics (OM), growth of epitaxial layers by OMCVD and laser chemical vapor deposition (LCVD), laser interaction with materials, structural and chemical evaluation of epitaxial layers, electrical evaluation of epitaxial layers and radiation effects in semiconductors and insulators. New OM precursors were developed and used in OMCVD. New OM sources are considered for lower toxicity and more efficient reaction. For the first time, InSb was grown in CdTe by OMCVD. A quadrupole mass analyzer and low temperature luminescence were installed for in situ diagnostics. Laser interaction studies reveal the importance of tunneling ionization for carrier generation in low bandgap materials. Ion emission has been measured from a metal surface due to laser irradiation. Ions were observed at low laser fluence and at a frequency corresponding to an energy less than the material work function. Rocking curve studies of MBE-grown strained GaInAs on GaAs is the most reliable technique for strains < 0.3%. LO-TO splitting in ion damaged GaAs has been explained by the effective ionic charge of the ion beam-induced point defects. Deep level transient spectroscopy studies of irradiated p-InP has revealed trap levels and annealing effects of importance in extraterrestrial applications. A Yb/p-InP device has shown good linearity and improved stability as a temperature sensor from 100-400K. Thin (150 A) oxides on Si for VLSI applications were found to be more radiation tolerant compared to thicker oxides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 14, 1988
- Accession Number
- ADA197529
Entities
People
- C. R. Wie
- H. S. Kwok
- O. T. Beachley Jr.
- P. L. Liu
- Wayne A. Anderson
Organizations
- University at Buffalo