Research of MBE Growth and Properties of Semiconductors Hetero-Interfaces with Unusual Band Lineups

Abstract

A wide diversity of topics related to various new properties of semiconductor heterostructures were investigated: (a) Staggered-lineup luminescence; (b) Band offsets at lattice-matched (Ga,In) P/GaAs heterojunctions; (c) Optical properties of GaSb/A1Sb multi-quantum well structures; (d) Growth of InAs/GaSb broken-gap heterojunctions; (e) Alternating-beam MBE; (f) Tilted super-lattices; (g) Schottky barriers between metals and semiconducting polymers. The determination of the band lineups at the (Ga,In) P/ GaAs heterojunction, and the achievement of tilted super-lattices by alternating-beam MBE were probably the most significant of these developments. The latter of these two forms the core of research under an ongoing follow-up contract. Keywords: Gallium arsenides; Gallium indium phosphides; Indium arsenides; Gallium antimonides; Aluminum antimonides; Molecular beam epitaxial growth; Heterojunctions; Quantum wells.

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Document Details

Document Type
Technical Report
Publication Date
Sep 19, 1988
Accession Number
ADA197728

Entities

People

  • Herbert Kroemer

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics
  • C4I

DTIC Thesaurus Topics

  • California
  • Compound Semiconductors
  • Contracts
  • Electronics
  • Energy Bands
  • Epitaxial Growth
  • Heterojunctions
  • Materials
  • Metals
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing