MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

Abstract

A report is made on growth and characterization of high quality HgCdTe epilayers, MBE growth and characterization of two-inch diameter p- and n- type Hg(1-x)Cd(X)Te films on GaAs(100) substrate. The n-type intrinsic and extrinsic doping is discussed. The incorporation of As has been photo assisted using a Nd-YAG pulsed laser. X-ray photoemission of Hg clusters on Hg(1-x)Cd(x) Te surfaces has been studied. Direct measurement by XPS and electrical determination of HgTe-CdTe valence band discontinuity give values of 300-400 meV at 300K. Silicon has been used as a n-type dopant to grow a homojunction which electrical characteristics are presented here.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1987
Accession Number
ADA197752

Entities

People

  • Jean-pierre Faurie

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Birds
  • Communication Systems
  • Crystals
  • Detectors
  • Electron Mobility
  • Energy Bands
  • Epitaxial Growth
  • Fermi Levels
  • Measurement
  • Molecular Beam Epitaxy
  • Photoelectric Emission
  • Semiconductors
  • Solid State Physics
  • Valence Bands
  • X Rays

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene