Picosecond Photoconductive Sampling Measurements of the Scattering Parameters of High-Speed Field-Effect Transistors
Abstract
Described are stimulus-response measurement techniques based on the photoconductive generation and sampling of picosecond electrical pulses for measuring the high-frequency scattering parameters of high-speed microwave devices. These techniques are compared with more conventional microwave diagnostic techniques. Keywords: Gallium arsenide field-effect transistor, Microwave devices, Photoconductive sampling, Picosecond optoelectronics, Scattering parameters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 22, 1988
- Accession Number
- ADA197966
Entities
People
- Duane D. Smith
- Steven C. Moss
Organizations
- The Aerospace Corporation