Dielectric Spectroscopy of Semiconductors
Abstract
Dielectric response measurements are reported on three types of devices, two of them junction diodes on high-resistivity silicon and the third a Metal Oxide Field Effect Transistor (FET) in nearly cut-off condition. The two diodes, despite similarity of their structures, show significant differences in their delayed transition rates, as manifested by their dielectric responses. The FET work is confirming a theoretical prediction that a two-dimensional electron gas should show strongly dispersive behaviour. Semiconductors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1988
- Accession Number
- ADA197992
Entities
People
- Andrew K. Jonscher
- Mohammad A. Bari
Organizations
- Royal Holloway, University of London