Semiconducting Transition Metal Silicides: New Materials for Optoelectronics on Silicon.

Abstract

Semiconducting transition metal silicide thin films of FeSi2, MnSi1.7, CrSi2, ReSi2, and IrSi1.75, were prepared. The electronic band structures were probed with measurements of the optical properties as a function of photon energy, together with measurements of the electrical resistivity as a function of temperature. The iron and manganese silicides possess direct forbidden energy gaps of 0.89 and 0.68 eV, respectively. The chromium and rhenium silicides exhibited apparently indirect gaps of slightly less than 0.35 and 0.12 eV, respectively. The bandgap of IrSi1.75 is close to that of silicon and could not be determined with the techniques available to use in this research. Applications for the semiconducting silicides, in optoelectronic chip interconnects and infrared detection, are noted. Reprints. (jes)

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1988
Accession Number
ADA198139

Entities

People

  • John E. Mahan

Organizations

  • Colorado State University

Tags

DTIC Thesaurus Topics

  • Absorption
  • Band Structures
  • Classification
  • Colorado
  • Detectors
  • Electrical Properties
  • Electronic Materials
  • Elements
  • Films
  • Materials
  • Metals
  • Military Research
  • Optical Properties
  • Optoelectronics
  • Security
  • Thin Films
  • Transition Metals

Fields of Study

  • Materials science

Readers

  • Cellular and Molecular Pathways of Apoptosis.
  • Materials Science and Engineering.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene