Non-Destructive Testing Using Infrared Birfringence

Abstract

In this work, the technique of infrared piezo birefringence is investigated for characterization of defects in semiconductor materials. As a first step towards simulating defect images, the cases of diametrically loaded discs of Si and GaAs were examined. Simulated images were generated by a computer and were compared with the experimentally obtained ones subjected to the same conditions. The results showed an excellent match between the two cases. The behavior of the stress-optic coefficient C was also investigated in this work. The value of C has been taken to be a constant in earlier works by other investigators. Keywords: Infrared birefringence, Defect simulation, Semiconductor materials, Non destructive characterization, Silicon, Gallium arsenides.

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Document Details

Document Type
Technical Report
Publication Date
Jul 20, 1988
Accession Number
ADA198141

Entities

People

  • Aloke K. Dutta
  • Burke Huner
  • Pratul K. Ajmera

Organizations

  • Louisiana State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Algorithms
  • Compression
  • Computer Simulations
  • Computers
  • Coordinate Systems
  • Crystal Lattices
  • Gray Scale
  • Lasers
  • Light Sources
  • Military Research
  • Optical Properties
  • Polariscopes
  • Polarization
  • Refraction
  • Refractive Index
  • Semiconductors
  • X Rays

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics