Atomic Layer Chemical Vapor Deposition of AlxGA1-xN for Solar Blind UV-Detectors
Abstract
APA Optics completed an SDI supported Phase I SBIR program aimed at developing Aluminum Gallium Nitride materials technology using atomic layer epitaxy. The key objective of the Phase I work was to study the nitrogen vacancy problem using a unique switched atomic layer MOCVD approach as the growth technique. These nitrogen vacancies result in extremely high carrier densities in single crystal epitaxial layers of GaN thereby rendering the material unusable for emitters (such as electroluminescent devices) or detectors (such as photoconductors or Schottky barriers). Four tasks were completed under Phase I program. Under the first task we designed and incorporated a unique Silicon Carbide coated graphic substrate in our low procures MOCVD system. This susceptor was designed to implement the switched atomic layer epitaxy approach. Program Task 2 focussed at growing single Layers of A1xGa1-xN (over entire 'x') using a standard low pressure MOCVD approach. We were successful in growing high quality single crystal layers. These layers were checked for single crystal nature (using Laue and RHEED), carrier concentrations and mobilities (using Van der Pauw and Hall measurements) and optical transmissions. These data as shown indicate material growth matching some of the best reported values in literature. Keywords: Sapphire, Substrates, Ultraviolet detectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 10, 1988
- Accession Number
- ADA198181
Entities
People
- M. A. Khan