Growth of HgZnTe Layers by LPE Technique
Abstract
Solid solution mixtures of a wide band gap II-VI compound with one constituent being the semimetal HgTe may be tuned to yield narrow gap semiconductors, suitable for the fabrication of infrared (3 micro - 14 micro) photon detectors. Among this group of solid solutions, Hg1-xCdxTe is at present the most commonly used material for photon detectors. In spite of the scientific and technological achievements difficulties still exist, generally attributed to the instability of these alloys. Thus, theoretical prediction about the relative stability of Hg1-xZnxTe, reported recently, stimulated experimental research into the narrow band gap range of this solid solution. In the present work the LPE of Hg1-xZnxTe was studied, focusing on the evaluation of this technique as a tool for achieving epitaxial layers of the 'new material', the solid solution Hg1-xZnxTe, with morphological, crystalline and electrical properties comparable with those of HgCdTe epilayers. Mercury cadmium tellurides, Mercury zinc tellurides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1988
- Accession Number
- ADA198368
Entities
People
- A. Sher
- A. Tsigelman
- D. Eger
Organizations
- Israel Atomic Energy Commission