Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers
Abstract
Superlattice (SL) structures are both fundamental and technical interest. Two classes of superlattices have been investigated. In the first class, the superlattice layers have lattice parameters that closely match those of the substrate, such as in the case of the AlGaAs-GaAs and InP 0.53Ga0.47As systems. In the second class, the strained-layer superlattice (SLS) (1), the alternating layers have lattice parameters that are different by a significant amount, but the layers are thin enough that the lattice mismatch is entirely accommodated by elastically straining the layers without the generation of misfit dislocations. Keywords: Aluminum, Gallium arsenides, Indium phosphides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1988
- Accession Number
- ADA198409
Entities
People
- S. M. Bedair
Organizations
- North Carolina State University