MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

Abstract

Here we report on growth and characterization of high quality HgCdTe grown on CdTe, CdZnTe, CdTeSi and GaAs substrate. A p-type layer grown on a two- inch diameter GaAs (100) substrate exhibiting an excellent uniformity in composition has also been grown. Extrinsic dopants such as In, As, Sb and Li have been investigated and heterojunctions have been grown in situ. We report also on the incorporation of mercury in CdTe layers during the growth of HgTe- CdTe superlattices. Keywords: Mercury cadmium tellurides, Gallium arsenides, Zinc.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1987
Accession Number
ADA198421

Entities

People

  • Jean-pierre Faurie

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Crystals
  • Detectors
  • Diffraction
  • Electrical Properties
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Infrared Detectors
  • Measurement
  • Semiconductors
  • Spectra
  • Transitions
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene