Fundamental Quantum 1/F Noise in Ultrasmall Semiconductor Devices and Their Optimal Design Principles
Abstract
During this period I have extended the second-quantized derivation of quantum 1/f noise shown in the Second Annual Report to the general case of N particles present in the final state. I also have derived the quantum 1/f cross correlations and the corresponding cross -correlation spectra, which are important for the calculation of quantum 1/f noise in kinetic coefficients such as the mobility and the diffusion coefficient of the current carriers in solids. In order to better explain the foundations of quantum 1/f theory, I have given a derivation of the quantum 1/f Schroedinger fields from quantum electrodynamics with the use of coherent states. Finally, I have given a direct derivation of the quantum 1/f effect in time and space. In terms of applications, a quantum 1/ f noise study of MIS detectors was performed. Experimentally, with the collaboration of the group of Prof. A van der Ziel, an excellent experimental verification of quantum 1/f theory was performed on semiconductor diodes, transistors and vacuum tubes, and a review article on the results of the experimental application and verification of my theory was published by A. van der Ziel in the Proceedings of IEEE in March 1988.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1988
- Accession Number
- ADA198462
Entities
People
- Peter H. Handel