Correlation of Atomic Roughness and Electronic Properties at the Si/ SiO2- Interface

Abstract

Investigation of steps and other defects at the Si/SiO2 interface by spot profile analysis of LEED. Development of improved defect analysis by use of high resolution LEED systems. Search for correlations of defects with electronic properties of MOS-devices by measurement of defects and electrical properties on the same wafers. The development of the evaluation procedure makes use of a high precision measurement at many different energies: since the spot profile can be separated in a central spike, two Lorentzian type shoulders and a constant background (which is not of interest here), the fraction of the contributions yields valuable informations: The central spike provides the vertical distribution (number of surface levels, distribution over the layers) the shoulders are used to derive the lateral width distribution of terraces and defect areas separately. Keywords: Interface, Defects, MOS devices, Atomic steps, Interface electrical breakdown, Correlation of defects, Electric properties, Silicon, Silicon dioxide.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1988
Accession Number
ADA198468

Entities

People

  • M. Henzler

Organizations

  • Leibniz University Hannover

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Band Structures
  • Defect Analysis
  • Diffraction
  • Electrical Measurement
  • Electrical Properties
  • Electron Spin Resonance
  • Energy Bands
  • Heat Treatment
  • High Resolution
  • Intensity
  • Measurement
  • Periodic Variations
  • Probability
  • Probability Distributions
  • Radiation
  • Scattering

Readers

  • Materials Science and Engineering.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene