Acoustic Phonon Scattering in Modulation Doped Aluminum sub x Gallium sub (1-x) Arsenide/Gallium Arsenide Heterojunctions

Abstract

We investigate acoustic deformation potential scattering in A1xGa1- XAs/GaAs modulation doped heterojunctions. We review previous measurements of the deformation potential constant Z and discuss the controversy over the discrepancy between the measured value of Z in bulk GaAs and in the heterojunction. By comparing the theory of scattering in bulk GaAs with previously reported measurements of the mobility at 77K we determine an upper limit for the deformation potential constant of 11 eV. We experimentally measure the relationship between the electron temperature and the power loss, and we compare our measurements with theory. We conclude, in general agreement with previous measurements in heterojunctions, that a large value of the deformation potential constant (approximately 16 eV) would be necessary to fit the data using a theory of acoustic phonon scattering. Keywords: Acoustic deformation potential scattering, Modulation doped heterojunctions, Deformation potential, Theory of scattering, Power loss.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1988
Accession Number
ADA198512

Entities

People

  • Stephen J. Manion

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Electron Density
  • Electron Energy
  • Electron Gas
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Heterojunctions
  • Measurement
  • Phonons
  • Potential Scattering
  • Scattering
  • Semiconductors
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics