Ion Implanted GaAs Microwave FETs

Abstract

The combination of ion implantation and photolithographic patterning techniques has been applied to the fabrication of GaAs microwave FETs. This approach was adopted with the aim of providing a large number of devices having consistently predictable dc and high frequency characteristics. This memorandum concentrates on a description of the technology research carried out between 1983 and 1986 which culminated in the successful demonstration of a processing scheme meeting this objective. To validate the accuracy and repeatability of the high frequency device parameters, and X-band microwave circuit has been designed and realized. The performance of this circuit, a buffered amplifier, was very close to the design specification. The availability of a large number of reproducible, well-characterized transistors has enabled work to commence on the development of a large signal model for FETs. The preliminary work in this area is also described in this report. Great Britain. (rh)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1988
Accession Number
ADA198541

Entities

People

  • B. J. Foreman
  • E. G. Blockley
  • J. R. Dawsey
  • J. Woodward
  • S. S. Gill

Organizations

  • Royal Signals and Radar Establishment

Tags

DTIC Thesaurus Topics

  • Accuracy
  • Amplifiers
  • Computer Programs
  • Crystal Structure
  • Equivalent Circuits
  • Fabrication
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Heat Treatment
  • Ion Implantation
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Resistance
  • Semiconductors
  • Standards
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Systems Analysis and Design
  • Thin Film Deposition Science.