The First Organogallium Four-Membered Ring Compound with Arsenic, Halogen Mixed Bridging: Synthesis and Crystal Structure of Ph2GaAs(SiMe3)2Ga(Ph) 2Cl

Abstract

Ph2GaAs(SiMe3)2Ga(Ph)2C1(1)has been isolated from the products of the room temperature reaction of Ph2GaC1 with(Me3Si)3As(reactants mixed in both a 2:1 and a 3:1 mole ration). A mixture of 1 and Ph2GaAs(SiMe3)22 (2)was isolated after heating a 1:1 mole ration combination of the same reactants. Reaction of pure 2 PREPARED FROM Ph2GaC1 and LiAs(SiMe3)2 with Ph2GaC1 resulted in the formation of(1). Prolonged heating of 1 produced a mixture of 2, Me3SiC1 and unidentified products. Compound 1 was structurally characterized by a single crystal X ray analysis and shown to be the first organogallium four-membered ring compound with both an arsenic and a halogen bridge. The ring of 1 is clearly non-planar as evidenced by the fact that the C1 atom is displaced from the Ga-As-Ga' plane to yield a dihedral angle of 8.8 degrees between the Ga-As- Ga' and Ga-C1-Ga' planes. Various other features of the structure of 1 are discussed. Gallium arsenides.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 03, 1988
Accession Number
ADA198571

Entities

People

  • Andrew T. McPhail
  • Colin G. Pitt
  • Richard L. Wells
  • Soheila Shafieezad
  • William K. Holley

Organizations

  • Duke University

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Abstracts
  • Chemical Laboratories
  • Chemistry
  • Contracts
  • Crystal Structure
  • Crystals
  • Dihedral Angle
  • Elements
  • Governments
  • Military Research
  • Mixtures
  • Molecular Structure
  • Molecular Weight
  • Phosphorus
  • Procurement
  • United States Government
  • X Rays

Fields of Study

  • Chemistry
  • Materials science

Readers

  • Analytical Chemistry
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics