Growth and Luminescence Spectroscopy of A CuCl Quantum Well Structure

Abstract

A structure of the type CaFa2/CuC1/CaF2, in which the confined layer is 150A thick, has been grown on a Si(111) surface by molecular beam epitaxy in ultra high vacuum. The optical properties of the CuC1 film have been characterized by low-temperature photoluminescence as a function of excitation density. Striking differences in the excitonic emissions are observed between the quantum well structure and a bulk single crystal of CuC1, and are discussed in terms of purity and thickness. Keywords: Molecular beam epitaxy, Photoluminescence, Excitons, Bi-excitons, Emission spectra, Scanning electron microscopy, Xray diffraction patterns.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1988
Accession Number
ADA198609

Entities

People

  • D. K. Shuh
  • R. Stanley Williams
  • Y. Segawa

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Crystals
  • Diffraction
  • Dispersion Relations
  • Electron Microscopy
  • Electrons
  • Excitation
  • Luminescence
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Scanning Electron Microscopy
  • Spectra
  • Spectroscopy
  • Thin Films
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing