Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductor 2

Abstract

The first topic treated is quantum transport. Two major lines of research have been investigated: the first is based on the introduction of the joint spectral density into a traditional Monte Carlo simulation; the second regards the formulation of a fully quantum mechanical approach for electron transport based on the density matrix approach. The second deals with treats noise, diffusion, and autocorrelation functions both from a theoretical and a simulative point of view. Results have been obtained for both bulk systems and quantum wells. The third topic concerns with an analysis of the effect of phonon populations in excess with respect to their thermal equilibrium values. Numerical Monte Carlo simulations have been performed for both GaAs and GaAs- A1GaAs quantum wells. Keywords: Gallium arsenides; Aluminum gallium arsenides; Quantum wells.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1988
Accession Number
ADA198686

Entities

People

  • Carlos Jacoboni
  • Lino Reggiani
  • Paulo Lugli
  • Rosella Brunetti

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Computational Science
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Diffusion Coefficient
  • Electron Energy
  • Electrons
  • Energy Transfer
  • Equations
  • Free Electrons
  • Monte Carlo Method
  • Phonons
  • Photoexcitation
  • Quantum Wells
  • Semiconductors
  • Simulations
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Statistical inference.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing