The Characterization of GaAs/AlGaAs Heterostructures by Variable Angle Spectroscopic Ellipsometry

Abstract

In the first study the layer thicknesses and gallium arsenide alloy compositions of a sample were measured on a multilayered sample at three positions extending radially from the center of the sample. The second study involved gallium arsenide/aluminum gallium arsenide multilayered structures; each containing a superlattice 'barrier'. These samples were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1988
Accession Number
ADA198776

Entities

People

  • Kenneth G. Merkel Ii

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Crystal Lattices
  • Diffraction
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Measurement
  • Optics
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Regression Analysis
  • Semiconductors
  • Spectra
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene