The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy
Abstract
Gallium nitride (GaN) is a wide bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron drift velocity of GaN are important properties in the performance of short wavelength optical devices and high power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or AlxGa1-xN devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue light emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1988
- Accession Number
- ADA199055
Entities
People
- Michael J. Paisley
- Robert F Davis
- Zlatko Sitar
Organizations
- North Carolina State University