Ohmic Contacts to Semiconducting Diamond

Abstract

Natural semiconducting diamond samples (class II-b) were used to develop techniques for the production of reproducible low-resistivity ohmic contacts for diamond devices. Annealed tantalum gold and titanium gold deposits on (100) polished diamond surfaces reduced the resistance by seven orders of magnitude relative to the as-received samples. The interfaces were characterized using metallography, scanning electron microscopy, and secondary ion mass spectrometry. Keywords: Electronic devices, Diamond technology, Reprints.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1988
Accession Number
ADA199180

Entities

People

  • James R. Zeidler
  • K. L. Moazed
  • Richard Nguyen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Diamond Films
  • Electron Microscopy
  • Elements
  • Films
  • Hall Effect
  • High Temperature
  • Mass Spectrometry
  • Materials
  • Materials Processing
  • Metal-Semiconductor Junctions
  • Metallography
  • Microscopy
  • Physical Properties
  • Resistance
  • Scanning Electron Microscopy
  • Spectrometry

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics